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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 5 Emitter-base voltage Open collector Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 2 3 25 150 -55~150 Emitter UNIT V V V A A W ae ae THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 5.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IB=0 IC=500m A;IB=50m A VCB=150V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V IC=0.4A ; VCE=10V;f=1MHz 40 5 MIN 150 200 5 2SD401A SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 1.0 50 50 200 |I |I V A A hFE classifications M 40-80 L TOR NDU ICO E SEM ANG INCH K 60-120 100-200 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD401A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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